ELECTRONIC-STRUCTURE OF COPPER, SILVER, AND GOLD IMPURITIES IN SILICON

被引:64
作者
FAZZIO, A [1 ]
CALDAS, MJ [1 ]
ZUNGER, A [1 ]
机构
[1] SOLAR ENERGY RES INST, GOLDEN, CO 80401 USA
来源
PHYSICAL REVIEW B | 1985年 / 32卷 / 02期
关键词
D O I
10.1103/PhysRevB.32.934
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:934 / 954
页数:21
相关论文
共 133 条
  • [91] DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEM
    NARUSAWA, T
    KOMIYA, S
    HIRAKI, A
    [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 389 - 390
  • [92] ELECTRICAL-PROPERTIES OF DEEP SILVER-RELATED AND IRON-RELATED CENTERS IN SILICON
    PEARTON, SJ
    TAVENDALE, AJ
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (36): : 6701 - 6710
  • [93] TIGHT-BINDING STUDY OF TRANSITION IONS IN SILICON AND ELECTRON-PARAMAGNETIC-RES SPECTRA
    PECHEUR, P
    TOUSSAINT, G
    [J]. PHYSICA B & C, 1983, 116 (1-3): : 112 - 115
  • [94] ELECTRONIC-STRUCTURE AND LUMINESCENT PROPERTIES OF CU+ AND AG+ IMPURITY CENTERS IN NACL
    PEDRINI, C
    CHERMETTE, H
    [J]. INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1983, 23 (03) : 1025 - 1032
  • [95] ELECTRONIC-STRUCTURE CALCULATION OF MN-DOPED GAAS
    PINO, AD
    FAZZIO, A
    LEITE, JR
    [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (03) : 369 - 372
  • [96] POSTNIKOV VS, 1980, SOV PHYS SEMICOND+, V14, P1342
  • [97] DEGENERACY FACTOR OF GOLD ACCEPTOR LEVEL IN SILICON
    RALPH, HI
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 672 - 675
  • [98] ROSSI G, 1981, SURF SCI, V112, pL765, DOI 10.1016/0039-6028(81)90325-3
  • [99] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
    SAH, CT
    FORBES, L
    ROSIER, LI
    TASCH, AF
    TOLE, AB
    [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +
  • [100] THEORY OF TETRAHEDRAL-SITE INTERSTITIAL S-BONDED AND P-BONDED IMPURITIES IN SI
    SANKEY, OF
    DOW, JD
    [J]. PHYSICAL REVIEW B, 1983, 27 (12) : 7641 - 7653