SYSTEMATICS OF METAL CONTACTS TO HG1-XCDXTE

被引：17

作者：

FRIEDMAN, DJ

CAREY, GP

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.574835

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：3190 / 3192

页数：3

共 22 条

[1] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

STOFFEL, NG ;

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841

[2]

CAREY GP, UNPUB

[3] CHANGES IN THE LOCAL CHEMICAL-COMPOSITION DURING THE HG1-XCDXTE-AL INTERFACE FORMATION [J].

DANIELS, RR ;

MARGARITONDO, G ;

DAVIS, GD ;

BYER, NE .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :50-52

[4] INTERACTION OF THIN-LAYERS OF AL AND GE WITH CLEAVED (HG,CD)TE SURFACES [J].

DAVIS, GD ;

BYER, NE ;

DANIELS, RR ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1726-1729

[5] DEPOSITION OF THE REACTIVE METALS AL AND IN ONTO SPUTTERED AND CLEAVED HG1-XCDXTE SURFACES [J].

DAVIS, GD ;

BECK, WA ;

NILES, DW ;

COLAVITA, E ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3150-3156

[6] INTERACTIONS BETWEEN CLEAVED (HG, CD)TE SURFACES AND DEPOSITED OVERLAYERS OF AL AND INDIUM [J].

DAVIS, GD ;

BYER, NE ;

RIEDEL, RA ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1915-1921

[7] DEPOSITION OF THE UNREACTIVE METAL AU ONTO SPUTTERED AND CLEAVED HG1-XCDXTE SURFACES [J].

DAVIS, GD ;

BECK, WA ;

KELLY, MK ;

TACHE, N ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3157-3161

[8] DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES [J].

DAVIS, GD ;

BECK, WA ;

BYER, NE ;

DANIELS, RR ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :546-550

[9] INTERFACE CHEMISTRY OF TERNARY SEMICONDUCTORS - LOCAL MORPHOLOGY OF THE HG1-XCDXTE(110)-CR INTERFACE [J].

FRANCIOSI, A ;

PHILIP, P ;

PETERMAN, DJ .

PHYSICAL REVIEW B, 1985, 32 (12) :8100-8107

[10] EFFECT OF DIFFERENT CATION-ANION BOND STRENGTHS ON METAL TERNARY-SEMICONDUCTOR INTERFACE FORMATION - CU/HG0.75CD0.25TE AND CU/CDTE [J].

FRIEDMAN, DJ ;

CAREY, GP ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1986, 34 (08) :5329-5342

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