SYSTEMATICS OF METAL CONTACTS TO HG1-XCDXTE

被引：17

作者：

FRIEDMAN, DJ

CAREY, GP

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.574835

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：3190 / 3192

页数：3

共 22 条

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[12] THE AG/(HG,CD)TE AND AL/(HG,CD)TE INTERFACES [J].

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[13] DIFFUSION OF AG AND HG AT THE AG/(HG, CD)TE INTERFACE [J].

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[14] ROLE OF HG BONDING IN METAL/HG1-XCDX TE INTERFACE FORMATION [J].

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[17] A SIMPLE SEMIQUANTITATIVE MODEL FOR CLASSIFYING METAL COMPOUND SEMICONDUCTOR INTERFACE REACTIVITY [J].

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[18] COHESION IN ALLOYS - FUNDAMENTALS OF A SEMI-EMPIRICAL MODEL [J].

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