LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS

被引：4

作者：

DAIO, H

BUCZKOWSKI, A

SHIMURA, F

机构：

[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh

[2] SILTEC Silicon, Salem

[3] Department of Material Science, Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka 437

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 06期

关键词：

D O I：

10.1149/1.2054967

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Temperature dependence of minority-carrier recombination lifetime in n-type Czochralski silicon wafers revealed the presence of metastable recombination centers located near the wafer surface. It is found that they are affected by the crystal pulling rate and the chemical surface treatment. The grown-in defects which strongly depend on the pulling rate, can contribute to the metastable surface centers.

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页码：1590 / 1593

页数：4

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