C-V ANALYSIS OF THE SCHOTTKY-BARRIER IN UNDOPED SEMIINSULATING GAAS

被引：14

作者：

DUBECKY, F ^{[1
]}

DARMO, J ^{[1
]}

BETKO, J ^{[1
]}

MOZOLOVA, Z ^{[1
]}

PELFER, PG ^{[1
]}

机构：

[1] IST NAZL FIS NUCL,I-50125 FLORENCE,ITALY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 09期

关键词：

D O I：

10.1088/0268-1242/9/9/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis is presented of the influence of the quasi-neutral base and the back contact on the measured C-V dependence of the Schottky barrier in undoped semi-insulating (USI) GaAs. It is shown that under specific experimental conditions, which include temperature, test signal frequency and sample geometry, routine C-V analysis can be applied to calculate the effective charge in the Schottky barrier, which is controlled by the concentration of fully ionized EL20/+, native donor-like states, if the capacitance is measured at a sufficiently low test signal frequency. Results of the low-frequency C-V analysis of the Schottky barrier in bulk USI GaAs supplied by four different manufacturers are presented. The existence of a depletion region in USI GaAs under the metal or injecting contact is demonstrated in a convincing way and the concentration of the effective charge in the barrier is determined.

引用

页码：1654 / 1658

页数：5

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