C-V ANALYSIS OF THE SCHOTTKY-BARRIER IN SEMI-INSULATING SEMICONDUCTORS

被引：9

作者：

DUBECKY, F

OLEJNIOVA, B

机构：

[1] Institute of Electrical Engineering, Slovak Academy of Sciences, CS-842 39 Bratislava

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 03期

关键词：

D O I：

10.1063/1.347228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the screening length and the base series admittance effect on the measurement of the barrier capacitance and voltage in semi-insulating (SI) semiconductors. Specific experimental conditions are summarized which enable the utilization of C-V analysis in SI materials. It is shown that under such experimental conditions the formula of Sah and Reddi for low-frequency C-V dependence can be applied for the calculation of the concentration of residual shallow impurities. These considerations are applied for the low-frequency C-V analysis of the Schottky barrier in SI GaAs:Cr formed by Au contact and the concentration of residual shallow donors is determined. Some limitations of the presented C-V analysis are discussed.

引用

页码：1769 / 1771

页数：3

共 22 条

[1] INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .1. REVIEW AND ANALYSIS OF SOME BASIC PROBLEMS [J].