DEEP LEVEL FOURIER SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS

被引:25
作者
IKEDA, K
TAKAOKA, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 03期
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D O I
10.1143/JJAP.21.462
中图分类号
O59 [应用物理学];
学科分类号
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页码:462 / 466
页数:5
相关论文
共 10 条
[1]   QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J].
GERSON, JD ;
CHENG, LJ ;
CORBETT, JW .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4821-4822
[2]   SINGLE THERMAL SCAN DLTS METHOD [J].
IKEDA, K ;
KAWAKAMI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :1589-1590
[3]   CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORS [J].
JOHNSON, NM ;
BARTELINK, DJ ;
GOLD, RB ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4828-4833
[4]   ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J].
KIMERLING, LC ;
DEANGELIS, HM ;
DIEBOLD, JW .
SOLID STATE COMMUNICATIONS, 1975, 16 (01) :171-174
[5]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[6]   DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].
LEFEVRE, H ;
SCHULZ, M .
APPLIED PHYSICS, 1977, 12 (01) :45-53
[7]  
MITONNEAU A, 1976, PHILIPS RES REP, V31, P244
[8]   ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS [J].
OKUSHI, H ;
TOKUMARU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L335-L338
[9]   THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].
SAH, CT ;
FORBES, L ;
ROSIER, LL ;
TASCH, AF .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+
[10]   STUDIES OF NEUTRON-PRODUCED DEFECTS IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
TOKUDA, Y ;
SHIMIZU, N ;
USAMI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) :309-315