SIMULATION OF THE BULK AND SURFACE-PROPERTIES OF AMORPHOUS HYDROGENATED SILICON DEPOSITED FROM SILANE PLASMAS

被引:37
作者
MCCAUGHEY, MJ
KUSHNER, MJ
机构
关键词
D O I
10.1063/1.342568
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:186 / 195
页数:10
相关论文
共 32 条
[1]   SPECTROSCOPIC ELLIPSOMETRY STUDY OF GLOW-DISCHARGE-DEPOSITED THIN-FILMS OF A-GE-H [J].
BLANCO, JR ;
MCMARR, PJ ;
VEDAM, K ;
ROSS, RC .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3724-3731
[2]   REACTION OF SILICON ION (2P) WITH SILANE (SIH4, SID4) - HEATS OF FORMATION OF SIH1, SIH2, SIH3, SIH1+, SIH2+, SIH3+, AND SI2H0+, SI2H1+, SI2H2+, SI2H3+ - REMARKABLE ISOTOPE EXCHANGE-REACTION INVOLVING 4 HYDROGEN SHIFTS [J].
BOO, BH ;
ARMENTROUT, PB .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1987, 109 (12) :3549-3559
[3]   INSITU ELLIPSOMETRY COMPARISON OF THE NUCLEATION AND GROWTH OF SPUTTERED AND GLOW-DISCHARGE A-SI-H [J].
COLLINS, RW ;
CAVESE, JM .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4146-4153
[4]   THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON [J].
COLLINS, RW ;
PAWLOWSKI, A .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1160-1166
[5]   SURFACE-ROUGHNESS EVOLUTION ON GLOW-DISCHARGE A-SI-H [J].
COLLINS, RW ;
CAVESE, JM .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1662-1664
[6]   SURFACE-STRUCTURE OF GLOW-DISCHARGE A-SI-H - IMPLICATIONS FOR MULTILAYER FILM GROWTH [J].
COLLINS, RW ;
CAVESE, JM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1439-1442
[8]   CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501
[9]   NEUTRAL RADICAL DEPOSITION FROM SILANE DISCHARGES [J].
GALLAGHER, A .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2406-2413
[10]   MONTE-CARLO SIMULATIONS OF AMORPHOUS HYDROGENATED SILICON THIN-FILM GROWTH [J].
GLEASON, KK ;
WANG, KS ;
CHEN, MK ;
REIMER, JA .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2866-2873