DEPTH PROFILES OF PERPENDICULAR AND PARALLEL STRAIN IN A GAASXP1-X/GAP SUPERLATTICE

被引:18
作者
SPERIOSU, VS
NICOLET, MA
PICRAUX, ST
BIEFELD, RM
机构
[1] CALTECH,PASADENA,CA 91125
[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
10.1063/1.95190
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:223 / 225
页数:3
相关论文
共 16 条
[1]  
BIEFELD RM, 1983, J ELECTRON MATER, V12, P903, DOI 10.1007/BF02655302
[2]   STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].
CAMRAS, MD ;
BROWN, JM ;
HOLONYAK, N ;
NIXON, MA ;
KALISKI, RW ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189
[3]   SUPER-LATTICE INTERFACE AND LATTICE STRAIN-MEASUREMENT BY ION CHANNELING [J].
CHU, WK ;
PAN, CK ;
CHANG, CA .
PHYSICAL REVIEW B, 1983, 28 (07) :4033-4036
[4]   NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].
ESAKI, L ;
CHANG, LL .
PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498
[5]   X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].
FLEMING, RM ;
MCWHAN, DB ;
GOSSARD, AC ;
WIEGMANN, W ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363
[6]   ELECTRON MOBILITIES IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPER-LATTICES [J].
FRITZ, IJ ;
DAWSON, LR ;
ZIPPERIAN, TE .
APPLIED PHYSICS LETTERS, 1983, 43 (09) :846-848
[7]   DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].
HORNSTRA, J ;
BARTELS, WJ .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517
[8]  
Ibers J. A., 1974, INT TABLES XRAY CRYS, VIV
[9]   DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273
[10]   REDUCTION OF DISLOCATION DENSITIES IN HETEROEPITAXIAL III-V VPE SEMICONDUCTORS [J].
OLSEN, GH ;
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
ZAMEROWSKI, TJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1643-1646