GE-SI ALLOY MICROSTRUCTURE FABRICATION BY DIRECT-LASER WRITING WITH ANALYSIS BY RAMAN MICROPROBE SPECTROSCOPY

被引:21
作者
HERMAN, IP [1 ]
MAGNOTTA, F [1 ]
机构
[1] UNIV CALIF LAWRENCE LIVERMORE NATL LAB,DEPT PHYS,LIVERMORE,CA 94550
关键词
D O I
10.1063/1.338286
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:5118 / 5128
页数:11
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共 33 条
[1]   ANHARMONIC EFFECTS IN LIGHT-SCATTERING DUE TO OPTICAL PHONONS IN SILICON [J].
BALKANSKI, M ;
WALLIS, RF ;
HARO, E .
PHYSICAL REVIEW B, 1983, 28 (04) :1928-1934
[2]   PROPERTIES OF RF SPUTTERED HYDROGENATED AMORPHOUS GERMANIUM-SILICON ALLOYS [J].
BANERJEE, PK ;
DUTTA, R ;
MITRA, SS ;
PAUL, DK .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 50 (01) :1-11
[3]  
Bauerle D., 1984, SPRINGER SER CHEM PH, V39, P166
[4]   STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J].
BEAN, JC .
SCIENCE, 1985, 230 (4722) :127-131
[5]   TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J].
BEERS, AM ;
BLOEM, J .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :153-155
[6]   INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].
BRAUNSTEIN, R ;
MOORE, AR ;
HERMAN, F .
PHYSICAL REVIEW, 1958, 109 (03) :695-710
[7]   RAMAN-SCATTERING IN GE-SI ALLOYS [J].
BRYA, WJ .
SOLID STATE COMMUNICATIONS, 1973, 12 (04) :253-257
[8]   RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].
CERDEIRA, F ;
PINCZUK, A ;
BEAN, JC ;
BATLOGG, B ;
WILSON, BA .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140
[9]   A RAMAN-SCATTERING STUDY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].
CERDEIRA, F ;
PINCZUK, A ;
BEAN, JC ;
BATLOGG, B ;
WILSON, BA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :600-602
[10]   RESONANCE RAMAN-SCATTERING IN SI AT ELEVATED-TEMPERATURES [J].
COMPAAN, A ;
TRODAHL, HJ .
PHYSICAL REVIEW B, 1984, 29 (02) :793-801