AUGER RECOMBINATION IN LONG-WAVELENGTH QUANTUM-WELL LASERS

被引:8
作者
SMITH, C [1 ]
ABRAM, RA [1 ]
BURT, MG [1 ]
机构
[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND
关键词
D O I
10.1049/el:19840606
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:893 / 894
页数:2
相关论文
共 13 条
[1]   AUGER EFFECT IN SEMICONDUCTORS [J].
BEATTIE, AR ;
LANDSBERG, PT .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29
[2]   CALCULATIONS OF OVERLAP INTEGRALS FOR AUGER PROCESSES INVOLVING DIRECT BAND-GAP SEMICONDUCTORS [J].
BRAND, S ;
ABRAM, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07) :L201-L206
[3]   OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT GAP III-V SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY HOLE BAND STATES WITH WAVEVECTORS ALONG THE (001) DIRECTION IN GAAS AND INP [J].
BURT, MG ;
SMITH, C .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (02) :L47-L52
[4]   AUGER RECOMBINATION RATE IN INGAASP LASERS [J].
BURT, MG .
ELECTRONICS LETTERS, 1982, 18 (19) :806-807
[5]   AUGER RECOMBINATION IN QUANTUM-WELL INGAASP HETEROSTRUCTURE LASERS [J].
CHIU, LC ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1406-1409
[7]   CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB [J].
HAUG, A ;
KERKHOFF, D ;
LOCHMANN, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :357-365
[8]   AUGER RECOMBINATION IN INGAASP [J].
HAUG, A .
APPLIED PHYSICS LETTERS, 1983, 42 (06) :512-514
[9]   PHOTO-EXCITED CARRIER LIFETIME AND AUGER RECOMBINATION IN 1.3-MU-M INGAASP [J].
SERMAGE, B ;
EICHLER, HJ ;
HERITAGE, JP ;
NELSON, RJ ;
DUTTA, NK .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :259-261
[10]   AUGER RECOMBINATION IN A QUANTUM WELL HETEROSTRUCTURE [J].
SMITH, C ;
ABRAM, RA ;
BURT, MG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (05) :L171-L175