DIRECT CORRELATION BETWEEN REFLECTION ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING THE GROWTH OF ALXGA1-XAS/GAAS QUANTUM WELLS AND THEIR PHOTOLUMINESCENCE PROPERTIES

被引：8

作者：

DEPARIS, C

MASSIES, J

NEU, G

机构：

[1] Laboratoire de Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Sophia Antipolis

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 03期

关键词：

D O I：

10.1063/1.102840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reflection high-energy electron diffraction (RHEED) intensity level behavior during the growth of AlxGa1-xAs/GaAs quantum wells (QWs) is compared to the photoluminescence characteristics. The correlation between a decrease of the RHEED intensity level and the linewidth broadening of the excitonic QW transitions allows the unambiguous association of such a decrease with a roughening of the growth interface.

引用

页码：233 / 235

页数：3

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