TRENDS IN PARTS SUSCEPTIBILITY TO SINGLE EVENT UPSET FROM HEAVY-IONS

被引：21

作者：

NICHOLS, DK

PRICE, WE

KOLASINSKI, WA

KOGA, R

PICKEL, JC

BLANDFORD, JT

WASKIEWICZ, AE

机构：

[1] AEROSPACE CORP,EL SEGUNDO,CA 90245

[2] IRT CORP,PLACENTIA,CA

[3] ROCKWELL INT CORP,ANAHEIM,CA 92803

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4189 / 4194

页数：6

共 7 条

[1] HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS - A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA [J].

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1190-1195

[2] A SUMMARY OF JPL SINGLE EVENT UPSET TEST DATA FROM MAY 1982, THROUGH JANUARY 1984 [J].

NICHOLS, DK ;

PRICE, WE ;

MALONE, CJ ;

SMITH, LS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1186-1189

[3] SINGLE EVENT UPSET (SEU) OF SEMICONDUCTOR-DEVICES - A SUMMARY OF JPL TEST DATA [J].

NICHOLS, DK ;

PRICE, WE ;

MALONE, CJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4520-4525

[4]

NICHOLS DK, UNPUB JPL

[5] COSMIC-RAY SIMULATION EXPERIMENTS FOR THE STUDY OF SINGLE EVENT UPSETS AND LATCH-UP IN CMOS MEMORIES [J].

STEPHEN, JH ;

SANDERSON, TK ;

MAPPER, D ;

FARREN, J ;

HARBOESORENSEN, R ;

ADAMS, L .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4464-4469

[6] INVESTIGATION FOR SINGLE-EVENT UPSET IN MSI DEVICES [J].

WOODS, JP ;

NICHOLS, DK ;

PRICE, WE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4022-4025

[7] EXPERIMENTAL-DETERMINATION OF SINGLE-EVENT UPSET (SEU) AS A FUNCTION OF COLLECTED CHARGE IN BIPOLAR INTEGRATED-CIRCUITS [J].

ZOUTENDYK, JA ;

MALONE, CJ ;

SMITH, LS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1167-1174

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