MAGNETORESISTANCE OF N-SILICON INVERSION LAYERS IN OHMIC AND IN HOT-ELECTRON RANGE

被引：4

作者：

HESS, K

机构：

[1] UNIV VIENNA,LUDWIG BOLTZMANN INST FESTKOPER PHYS,A-1090 VIENNA,AUSTRIA

[2] UNIV VIENNA,INST ANGEW PHYS,A-1090 VIENNA,AUSTRIA

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90143-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：235 / 237

页数：3

相关论文

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[2] WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS
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[8] GALVANOMAGNETIC EFFECTS IN SILICON SURFACE INVERSION LAYERS
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