REAL-TIME X-RAY STUDIES OF STRAIN KINETICS IN INXGA1-XAS QUANTUM-WELL STRUCTURES

被引：10

作者：

CLARKE, R

DOSPASSOS, W

LOWE, W

RODRICKS, BG

BRIZARD, C

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] ARGONNE NATL LAB,DIV ADV PHOTON SOURCE,ARGONNE,IL 60439

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.66.317

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new time-resolved x-ray method of probing the kinetics of interfacial strains in semiconductor heterostructures is presented. High-resolution synchrotron-radiation measurements of the strain relaxation during rapid thermal annealing show that the lattice dilation of an as-grown quantum well structure is relieved cooperatively by a series of sluggish discontinuous transitions. Well-defined metastable states of strain are observed between the transitions.

引用

收藏

页码：317 / 320

页数：4

相关论文

共 15 条

[1] COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION [J].

BERGER, PR ;

BHATTACHARYA, PK ;

SINGH, J .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2856-2860

[2] STRUCTURAL TRANSITIONS IN EPITAXIAL OVERLAYERS [J].

BRUINSMA, R ;

ZANGWILL, A .

JOURNAL DE PHYSIQUE, 1986, 47 (12) :2055-2073

[3] THE EFFECT OF LATTICE MISMATCH ON THE DYNAMIC MICROSTRUCTURE OF III-V COMPOUND SURFACES [J].

EBNER, JT ;

ARTHUR, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2007-2010

[4] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006

[5] OBSERVATION OF COMPRESSIVE AND TENSILE STRAINS IN INGAAS GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY [J].

GAL, M ;

ORDERS, PJ ;

USHER, BF ;

JOYCE, MJ ;

TANN, J .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :113-115

[6]

GIBSON JM, 1985, MRS S P, V37

[7] THERMAL-STABILITY OF SI/GEXSI1-X/SI HETEROSTRUCTURES [J].

HULL, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1989, 55 (18) :1900-1902

[8] X-RAY CURVED-CRYSTAL MONOCHROMATOR SYSTEM AT STORAGE RING DCI [J].

LEMONNIER, M ;

FOURME, R ;

ROUSSEAUX, F ;

KAHN, R .

NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01) :173-177

[9] DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION [J].

ORDERS, PJ ;

USHER, BF .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :980-982

[10] A VIRTUAL PHASE CCD DETECTOR FOR SYNCHROTRON RADIATION APPLICATIONS [J].

RODRICKS, B ;

CLARKE, R ;

SMITHER, R ;

FONTAINE, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (08) :2586-2591