VACUUM CHEMICAL EPITAXY UTILIZING ORGANOMETALLIC SOURCES

被引：12

作者：

FRAAS, LM

MCLEOD, PS

PARTAIN, LD

COHEN, MJ

CAPE, JA

机构：

[1] Chevron Research Co, Richmond, CA,, USA, Chevron Research Co, Richmond, CA, USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 03期

关键词：

D O I：

10.1007/BF02655333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：175 / 180

页数：6

共 13 条

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[2] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD [J].

FRAAS, LM ;

MCLEOD, PS ;

CAPE, JA ;

PARTAIN, LD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :490-496

[3] HIGH-EFFICIENCY GAAS0.7P0.3 SOLAR-CELL ON A TRANSPARENT GAP WAFER [J].

FRAAS, LM ;

CAPE, JA ;

MCLEOD, PS ;

PARTAIN, LD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2302-2304

[4] A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FRAAS, LM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6939-6343

[5]

FRAAS LM, 1984, 17TH P IEEE PHOT SPE, P734

[6]

FRAAS LM, J VAC SCI TECHNOL

[7] MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AS AN INDIUM SOURCE [J].

KAWAGUCHI, Y ;

ASAHI, H ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L737-L739

[8] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

TEMKIN, H ;

SUMSKI, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665

[9] MEASUREMENT OF A LONG DIFFUSION LENGTH IN A GAAS FILM IMPROVED BY METALORGANIC-CHEMICAL-VAPOR-DEPOSITION SOURCE PURIFICATIONS [J].

PARTAIN, LD ;

COHEN, MJ ;

CAPE, JA ;

FRAAS, LM ;

MCLEOD, PS ;

DEAN, CS ;

RANSOM, RA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) :3784-3789

[10] GAAS GROWTH IN METAL-ORGANIC MBE [J].

PUTZ, N ;

VEUHOFF, E ;

HEINECKE, H ;

HEYEN, M ;

LUTH, H ;

BALK, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :671-673

← 1 2 →