MOLECULAR-BEAM EPITAXY ALGAAS/GAAS GROWN IN THE PRESENCE OF HYDROGEN

被引：3

作者：

PAO, YC

LIU, D

HARRIS, JS

机构：

[1] VARIAN ASSOCIATES,CENT RES LAB,PALO ALTO,CA 94303

[2] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90407-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：305 / 308

页数：4

共 10 条

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[9] PASSIVATION OF SI DONORS AND DX CENTERS IN ALGAAS BY HYDROGEN PLASMA EXPOSURE [J].

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[10] EFFECT OF HYDROGEN ON UNDOPED AND LIGHTLY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J].

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