GROWTH OF EPITAXIAL-FILMS OF CDTE AND (CD,MN)TE ON GAAS SUBSTRATES

被引：19

作者：

SIEGRIST, T ^{[1
]}

SEGMULLER, A ^{[1
]}

MARIETTE, H ^{[1
]}

HOLTZBERG, F ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.96920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1395 / 1397

页数：3

共 19 条

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[16] SEGMULLER A, 1986, ADV XRAY ANAL, V29, P353
[17] Stankiewicz J., 1980, Journal of the Physical Society of Japan, V49, P827
[18] STANKIEWICZ J, 1980, P INT C SEMICONDUCTO
[19] REFLECTIVITY SPECTRA OF CD1-XMNXTE,ZN1-XMNXS AND ZN1-XMNXSE IN THE 0.7-8.1EV ENERGY-RANGE
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