GAAS SCHOTTKY DIODE BARRIER HEIGHTS RELATED TO SURFACE AND INTERFACE STATES

被引：6

作者：

PALAU, JM

ISMAIL, A

TESTEMALE, E

LASSABATERE, L

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90676-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：860 / 862

页数：3

共 20 条

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[8] LEED INTENSITY ANALYSIS OF THE STRUCTURE OF AL ON GAAS(110)
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