ANTIPHASE-DOMAIN-FREE INP ON SI(001) - OPTIMIZATION OF MOCVD PROCESS

For the purpose of growing III-V materials onto Si(001), the Si substrate has been subjected up to now to a pre-growth annealing step at very high temperatures around 1000-degrees-C. We report successful growth of antiphase-domain-free InP on Si(001) without any preannealing of the Si substrate using low pressure metalorganic chemical vapor deposition. Optimized crystallographic and optical properties are obtained for an off-cut along [110BAR] of 4-degrees +/- 0.4-degrees, an InP-buffer growth temperature of 400 +/- 10-degrees-C, a main layer deposition temperature of 640-degrees-C, low growth rates r less-than-or-equal-to 3-mu-m/h and large layer thickness.