LOCALIZED EPITAXIAL-GROWTH OF WSI2 ON SILICON

被引：19

作者：

LIN, WT

CHEN, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3481 / 3488

页数：8

共 24 条

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[9] LOCALIZED EPITAXIAL-GROWTH OF HEXAGONAL AND TETRAGONAL MOSI2 ON (111) SI [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (11) :1061-1063

[10] LOCALIZED EPITAXIAL-GROWTH OF TETRAGONAL AND HEXAGONAL WSI2 ON (111)SI [J].

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