OPTICAL AND ELECTRICAL CHARACTERIZATION OF SI/GE SUPERLATTICES

被引：4

作者：

GRIMMEISS, HG ^{[1
]}

NAGESH, V ^{[1
]}

ENGVALL, J ^{[1
]}

OLAJOS, J ^{[1
]}

PRESTING, H ^{[1
]}

KIBBEL, H ^{[1
]}

KASPER, E ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSZENTRUM,W-7900 ULM,GERMANY

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90076-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using recent studies of absorption and photoluminescence, different junction space charge techniques have been employed to separate intrinsic signals from extrinsic responses in ultrathin Si/Ge superlattices. The diodes showed good I-V characteristics with ideality factors of about 2 and a reverse current of about 10(-11) A for voltages less than 1 V. The extrinsic photoionization cross-section spectrum exhibited oscillatory properties which are discussed in terms of Wannier-Stark localization.

引用

页码：237 / 242

页数：6

共 13 条

[1] QUANTUM COHERENCE IN SEMICONDUCTOR SUPERLATTICES [J].

AGULLORUEDA, F ;

MENDEZ, EE ;

HONG, JM .

PHYSICAL REVIEW B, 1989, 40 (02) :1357-1360

[2] ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES [J].

BLEUSE, J ;

BASTARD, G ;

VOISIN, P .

PHYSICAL REVIEW LETTERS, 1988, 60 (03) :220-223

[3] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION [J].

BRAUN, S ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2789-2794

[4] OPTICAL STUDIES OF SHORT-PERIOD SI/GE SUPERLATTICES BY PHOTOCAPACITANCE [J].

GRIMMEISS, HG ;

NAGESH, V ;

PRESTING, H ;

KIBBEL, H ;

KASPER, E .

PHYSICAL REVIEW B, 1992, 45 (03) :1236-1239

[5] FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J].

GRIMMEISS, HG ;

OVREN, C .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09) :1032-1042

[6] HIGH-RESOLUTION ABSORPTION-MEASUREMENTS IN GOLD DOPED SI/GE ALLOYS [J].

HELLQVIST, EL ;

NAGESH, V ;

GRIMMEISS, HG ;

KLEVERMAN, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01) :43-46

[7] HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE) [J].

KASPER, E ;

WORNER, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) :2481-2486

[8] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J].

KASPER, E ;

KIBBEL, H ;

JORKE, H ;

BRUGGER, H ;

FRIESS, E ;

ABSTREITER, G .

PHYSICAL REVIEW B, 1988, 38 (05) :3599-3601

[9]

KASPER E, 1980, THIN SOLID FILMS, V183, P87

[10] STARK LOCALIZATION IN GAAS-GAALAS SUPERLATTICES UNDER AN ELECTRIC-FIELD [J].

MENDEZ, EE ;

AGULLORUEDA, F ;

HONG, JM .

PHYSICAL REVIEW LETTERS, 1988, 60 (23) :2426-2429

← 1 2 →