DETERMINATION OF LOW-TEMPERATURE IMPACT IONIZATION COEFFICIENTS IN GAAS BY ELECTROLUMINESCENCE MEASUREMENTS ON SINGLE BARRIER TUNNELING STRUCTURES

被引：1

作者：

COCKBURN, JW ^{[1
]}

SKOLNICK, MS ^{[1
]}

DAVID, JPR ^{[1
]}

GREY, R ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,SERC CENT FACIL MAT 3-5,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.107757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of the absolute intensity of electroluminescence (EL) due to impact ionization in n-type GaAs/AlGaAs single barrier tunneling structures are reported. These measurements yield values for the impact ionization coefficient (a) for electrons in GaAs as a function of electric field at a temperature of 5 K. Structures with undoped high field regions of length 100, 150, and 200 nm are shown to give very similar quantitative results for alpha. Very good agreement is obtained with the results of low temperature carrier multiplication measurements, carried out independently on a bulk GaAs p-i-n diode, thus establishing EL studies as a reliable quantitative probe of impact ionization phenomena.

引用

页码：825 / 827

页数：3

共 10 条

[1]

ANDERSON CL, 1972, PHYS REV B, V5, P267

[2] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].