AVALANCHE BUILDUP TIME OF SILICON REACH-THROUGH PHOTODIODES

被引：23

作者：

KANEDA, T ^{[1
]}

TAKANASHI, H ^{[1
]}

MATSUMOTO, H ^{[1
]}

YAMAOKA, T ^{[1
]}

机构：

[1] FUJITSU LABS, NAKAHARA KU, KAWASAKI, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.322502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4960 / 4963

页数：4

共 20 条

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[8] AVALANCHE BUILDUP TIME OF SILICON AVALANCHE PHOTODIODES [J].

KANEDA, T ;

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