EFFECTS OF SILICON AND SELENIUM DOPING ON GALLIUM ARSENIDE LASER CHARACTERISTICS

被引：5

作者：

DOBSON, CD

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1966年 / 17卷 / 02期

关键词：

D O I：

10.1088/0508-3443/17/2/305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：187 / &

共 9 条

[1] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].

DOUSMANIS, GC ;

STAEBLER, DL ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&

[2] NEW JUNCTION LASER RESONANT STRUCTURES [J].

GARFINKEL, M ;

ENGELER, WE ;

LOCKE, DJ .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2321-&

[3] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[4]

KEYES RJ, 1962, P IRE, V50, P1822

[5] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[6] SEMICONDUCTOR MASER OF GAAS [J].

QUIST, TM ;

REDIKER, RH ;

KEYES, RJ ;

KRAG, WE ;

LAX, B ;

MCWHORTER, AL ;

ZEIGLER, HJ .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :91-92

[7] BEHAVIOR OF SELENIUM IN GALLIUM ARSENIDE [J].

VIELAND, LJ ;

KUDMAN, I .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (03) :437-&

[8]

WHELAN JM, 1961, 1960 P INT C SEM PHY, P943

[9] STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GAAS P-N JUNCTIONS [J].

WILSON, DK .

APPLIED PHYSICS LETTERS, 1963, 3 (08) :127-129

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