EVIDENCES THAT P-DIFFUSION IN SI IS ASSISTED MAINLY BY VACANCIES

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6788 - 6796

[2] HREM OF SIP PRECIPITATES AT THE (111) SILICON SURFACE DURING PHOSPHORUS PREDEPOSITION [J]. ULTRAMICROSCOPY, 1984, 14 (1-2) : 97 - 106

[3] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 777 - 779

[4] FAIR RB, 1979, I PHYS C SER, V46, P559

[5] Gosele U., 1983, Defects in Semiconductors II, Symposium Proceedings, P45

[6] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 937 - 939

[7] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573

[8] DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3518 - 3530

[9] Mathiot D., 1985, Impurity Diffusion and Gettering in Silicon Symposium, P117

[10] EFFECTS OF PHOSPHORUS DIFFUSION ON GROWTH AND SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) : 3428 - 3438

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6788 - 6796

[2] HREM OF SIP PRECIPITATES AT THE (111) SILICON SURFACE DURING PHOSPHORUS PREDEPOSITION [J]. ULTRAMICROSCOPY, 1984, 14 (1-2) : 97 - 106

[3] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 777 - 779

[4] FAIR RB, 1979, I PHYS C SER, V46, P559

[5] Gosele U., 1983, Defects in Semiconductors II, Symposium Proceedings, P45

[6] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 937 - 939

[7] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573

[8] DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3518 - 3530

[9] Mathiot D., 1985, Impurity Diffusion and Gettering in Silicon Symposium, P117

[10] EFFECTS OF PHOSPHORUS DIFFUSION ON GROWTH AND SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) : 3428 - 3438