INFLUENCE OF SF6 COVERAGE ON THE SPUTTERING BEHAVIOR OF CR-TARGETS

被引：5

作者：

HUSINSKY, W ^{[1
]}

BETZ, G ^{[1
]}

STREHL, B ^{[1
]}

WURZ, P ^{[1
]}

MADER, K ^{[1
]}

KREBS, KH ^{[1
]}

机构：

[1] ACAD SCI GDR, ZENT INST ELEKTR PHYS, HAUSVOGTEIPLATZ 5, DDR-1086 BERLIN, GER DEM REP

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80020-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：92 / 96

页数：5

共 15 条

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[2] VELOCITY DISTRIBUTIONS OF THE METAL ATOMS SPUTTERED FROM OXYGEN AND NITROGEN COVERED TI-SURFACE AND AL-SURFACE [J].

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[5] VELOCITY DISTRIBUTIONS AND SPUTTERING YIELDS OF CHROMIUM ATOMS UNDER ARGON, OXYGEN AND CARBON ION-BOMBARDMENT [J].

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BAY, HL .

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[6]

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[7] ETCHING OF SILICON BY SF6 INDUCED BY ION-BOMBARDMENT [J].

OOSTRA, DJ ;

HARING, A ;

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VANVEEN, GNA .

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[8] ION-ASSISTED ETCHING OF SILICON BY SF6 [J].

OOSTRA, DJ ;

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DEVRIES, AE ;

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APPLIED PHYSICS LETTERS, 1985, 46 (12) :1166-1168

[9]

PELLIN MJ, 1984, SURF SCI, V144, P619, DOI 10.1016/0039-6028(84)90123-7

[10] SECONDARY ION PRODUCTION BY LATENT ENERGY OF NEUTRALLY EMITTED PARTICLES [J].

PLOG, C ;

GERHARD, W .

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