THERMODYNAMIC AND KINETIC PROCESSES INVOLVED IN THE GROWTH OF EPITAXIAL GAN THIN-FILMS

被引:75
作者
NEWMAN, N
ROSS, J
RUBIN, M
机构
[1] Lawrence Berkeley Laboratory, Berkeley, CA 94720
关键词
D O I
10.1063/1.108746
中图分类号
O59 [应用物理学];
学科分类号
摘要
Our experimental results using reactive magnetron sputtering, combined with earlier literature, are used to understand the thermodynamic and kinetic processes involved in GaN film growth and the limiting factors involved in the incorporation of nitrogen during the growth process. We show that GaN films fabricated with low pressure growth techniques (< 0.1 Torr) such as sputtering and molecular beam epitaxy are formed under metastable conditions with a nonequilibrium kinetically limited reaction. For these methods, the growth process is controlled by a competition between the forward reaction, which depends on the arrival of activated nitrogen species at the growing surface, and the reverse reaction whose rate is limited by the unusually large kinetic barrier of decomposition of GaN. In practice, the thermally activated rate of decomposition sets an upper bound to the growth temperature.
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收藏
页码:1242 / 1244
页数:3
相关论文
共 30 条
  • [21] EPITAXIAL-GROWTH OF UNDOPED AND MG-DOPED GAN
    SANO, M
    AOKI, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) : 1943 - 1950
  • [22] SUBSTRATE-ORIENTATION DEPENDENCE OF GAN SINGLE-CRYSTAL FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    SASAKI, T
    ZEMBUTSU, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2533 - 2540
  • [23] CRYSTALLINITY OF GAN FILM GROWN BY ECR PLASMA-EXCITED MOVPE
    SATO, H
    SASAKI, T
    MATSUOKA, T
    KATSUI, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (09): : 1654 - 1655
  • [24] VAPORIZATION CATALYSIS . DECOMPOSITION OF GALLIUM NITRIDE
    SCHOONMA.RC
    BUHL, A
    LEMLEY, J
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1965, 69 (10) : 3455 - &
  • [25] SHUJI, 1991, JPN J APPL PHYS, V30, pL1705
  • [26] GROWTH OF AIN/GAN LAYERED STRUCTURES BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    SITAR, Z
    PAISLEY, MJ
    YAN, B
    RUAN, J
    CHOYKE, WJ
    DAVIS, RF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 316 - 322
  • [27] AN INVESTIGATION OF THE PROPERTIES OF CUBIC GAN GROWN ON GAAS BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
    STRITE, S
    RUAN, J
    LI, Z
    SALVADOR, A
    CHEN, H
    SMITH, DJ
    CHOYKE, WJ
    MORKOC, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 1924 - 1929
  • [28] EQUILIBRIUM PRESSURE OF N2 OVER GAN
    THURMOND, CD
    LOGAN, RA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 622 - &
  • [29] WEAST RC, 1990, HDB CHEM PHYSICS, pD50
  • [30] GAS INCORPORATION INTO SPUTTERED FILMS
    WINTERS, HF
    KAY, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) : 3928 - &