STRUCTURE OF CHEMICALLY DEPOSITED NI/SI CONTACTS

被引：8

作者：

DAN, PA

POPOVICI, G

DASCALU, D

BREZEANU, G

POPA, A

机构：

[1] POLYTECH INST,DEPT ELECTR,R-77748 BUCHAREST,ROMANIA

[2] INST FIZ & TECHNOL APARATELOR RADIATII,BUCHAREST,ROMANIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 12期

关键词：

D O I：

10.1149/1.2119616

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2472 / 2478

页数：7

共 36 条

[1] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].

ANDREWS, JM ;

KOCH, FB .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&

[2] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].

ANDREWS, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984

[3]

BAGLIN JEE, 1978, ELECTROCHEMICAL SOC, pCH9

[4] IS 1ST COMPOUND NUCLEATION AT METAL - SEMICONDUCTOR INTERFACES AN ELECTRONICALLY INDUCED INSTABILITY [J].

BENE, RW ;

WALSER, RM ;

LEE, GS ;

CHEN, KC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :911-915

[5]

BENE RW, 1979, 14TH P INT C PHYS SE, P773

[6] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[7] METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM [J].

CHEUNG, NW ;

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MAYER, JW ;

ULLRICH, BM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :917-923

[8] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES [J].

COE, DJ ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) :965-972

[9]

Czanderna A.W., 1975, METHODS SURFACE ANAL

[10]

DAN PA, UNPUB ELECTROTEHN EL

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