HIGH-QUALITY GAN HETEROEPITAXIAL FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：45

作者：

FERTITTA, KG

HOLMES, AL

NEFF, JG

CIUBA, FJ

DUPUIS, RD

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of high-quality GaN heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition. These films have exhibited narrow x-ray-diffraction rocking curves with full-width-at-half-maximum values as low as DELTATHETA approximately 38 arc sec. These are the narrowest x-ray-diffraction rocking curve linewidths reported to date for any III-V nitride film. Electrical and optical measurements further indicate the samples to be of high quality. (C) 1994 American Institute of Physics.

引用

页码：1823 / 1825

页数：3

共 22 条

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