A SIMPLE-MODEL FOR SHORT-CHANNEL EFFECTS OF A BURIED-CHANNEL MOSFET ON THE BURIED INSULATOR

[11] OHWADA K, 1979, REV ELEC COMMUN LAB, V27, P642

[12] Ohwada K., 1980, International Electron Devices Meeting. Technical Digest, P756

[13] THRESHOLD AND SUB-THRESHOLD CHARACTERISTICS THEORY FOR A VERY SMALL BURIED-CHANNEL MOSFET USING A MAJORITY-CARRIER DISTRIBUTION MODEL [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 301 - 308

[14] THRESHOLD VOLTAGE THEORY FOR A SHORT-CHANNEL MOSFET USING A SURFACE-POTENTIAL DISTRIBUTION MODEL [J]. SOLID-STATE ELECTRONICS, 1979, 22 (12) : 1045 - 1051

[15] OMURA Y, 1978, T I ELECTRON COMM JC, V61, P628

[16] ON THE SCALING OF SI-MESFETS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (12): : 259 - 262

[17] A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2043 - 2050

[18] SANO E, COMMUNICATION

[19] DC AND HIGH-FREQUENCY CHARACTERISTICS OF BUILT-IN CHANNEL MOS-FETS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 495 - 505

[20] SUB-THRESHOLD CONDUCTION IN MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 337 - 350

[11] OHWADA K, 1979, REV ELEC COMMUN LAB, V27, P642

[12] Ohwada K., 1980, International Electron Devices Meeting. Technical Digest, P756

[13] THRESHOLD AND SUB-THRESHOLD CHARACTERISTICS THEORY FOR A VERY SMALL BURIED-CHANNEL MOSFET USING A MAJORITY-CARRIER DISTRIBUTION MODEL [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 301 - 308

[14] THRESHOLD VOLTAGE THEORY FOR A SHORT-CHANNEL MOSFET USING A SURFACE-POTENTIAL DISTRIBUTION MODEL [J]. SOLID-STATE ELECTRONICS, 1979, 22 (12) : 1045 - 1051

[15] OMURA Y, 1978, T I ELECTRON COMM JC, V61, P628

[16] ON THE SCALING OF SI-MESFETS [J]. ELECTRON DEVICE LETTERS, 1980, 1 (12): : 259 - 262

[17] A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2043 - 2050

[18] SANO E, COMMUNICATION

[19] DC AND HIGH-FREQUENCY CHARACTERISTICS OF BUILT-IN CHANNEL MOS-FETS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 495 - 505

[20] SUB-THRESHOLD CONDUCTION IN MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 337 - 350