STABILITY OF STRAINED QUANTUM-WELL FIELD-EFFECT TRANSISTOR STRUCTURES

[1] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6183 - 6189

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[3] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[4] P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1986, 49 (08) : 461 - 463

[5] FRITZ IJ, 1986, I PHYS C SER, V83, P233

[6] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379

[7] Henderson T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P464

[8] JONES ED, 1988, 1988 EL MAT C BOULD

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] CHARACTERIZATION OF ION-IMPLANTATION DOPING OF STRAINED-LAYER SUPERLATTICES .1. STRUCTURAL-PROPERTIES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3631 - 3640

[1] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6183 - 6189

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[3] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[4] P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1986, 49 (08) : 461 - 463

[5] FRITZ IJ, 1986, I PHYS C SER, V83, P233

[6] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379

[7] Henderson T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P464

[8] JONES ED, 1988, 1988 EL MAT C BOULD

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] CHARACTERIZATION OF ION-IMPLANTATION DOPING OF STRAINED-LAYER SUPERLATTICES .1. STRUCTURAL-PROPERTIES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3631 - 3640