REDUCTION OF MOBILE PT ION DENSITY IN SIO2 AND SI-SIO2 INTERFACE STATE DENSITY IN PT-DIFFUSED METAL-OXIDE-SEMICONDUCTOR STRUCTURES

Platinum diffusion into bipolar devices introduces mobile Pt ions into SiO2 films and causes the state density at the Si-SiO2 interface to increase. Mobile Pt ions make the devices unstable and the increase in the interface state density causes enhancement of leakage current. MOS, metal-phosphosilicate glass-oxide-semiconductor (MGOS) and metal-silicon nitride-oxide-semiconductor (MNOS) structures are fabricated on (111) and (100) substrates in order to investigate means of reducing these adverse effects induced by Pt diffusion. Mobile Pt ions, the interface state density and the flat-band voltage for these structures are measured. The experimental results show that the MGOS structure with the (100) oriented substrate is most beneficial in reducing the adverse effects of Pt-diffused devices.