EFFECT OF GAS-PHASE STOICHIOMETRY ON MINORITY-CARRIER DIFFUSION LENGTH IN VAPOR-GROWN GAAS

被引：26

作者：

ETTENBERG, M ^{[1
]}

OLSEN, GH ^{[1
]}

NUESE, CJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 03期

关键词：

D O I：

10.1063/1.89027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：141 / 142

页数：2

共 12 条

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[2] INFLUENCE OF GAS-PHASE STOICHIOMETRY ON DEFECT MORPHOLOGY, IMPURITY DOPING, AND ELECTROLUMINESCENCE EFFICIENCY OF VAPOR-GROWN GAAS P-N-JUNCTIONS [J].

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[3] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J].

ETTENBERG, M ;

KRESSEL, H ;

GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :827-831

[4] COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE [J].

ETTENBERG, M ;

NUESE, CJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3500-3508

[5]

ETTENBERG M, TO BE PUBLISHED

[6] EFFECT OF HEAT TREATMENT WITH EXCESS ARSENIC PRESSURE ON PHOTOLUMINESCENCE OF P-TYPE GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1654-&

[7]

LOFERSKI JJ, 1961, RCA REV, V22, P38

[8] PROPERTIES OF SN-DOPED GAAS [J].

NISHIZAW.J ;

SHINOZAK.S ;

ISHIDA, K .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1638-1645

[9] VAPOR-GROWN CW ROOM-TEMPERATURE GAAS-INYGA1-YP LASERS [J].

NUESE, CJ ;

OLSEN, GH ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :54-56

[10] STOICHIOMETRIC EFFECTS IN GROWTH OF DOPED EPITAXIAL LAYERS OF GAAS1-XPX [J].

STEWART, CEE .

JOURNAL OF CRYSTAL GROWTH, 1971, 8 (03) :259-&

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