THE EFFECTS OF THERMAL HISTORY DURING GROWTH ON O-PRECIPITATION IN CZOCHRALSKI SILICON

被引：29

作者：

FRAUNDORF, G

FRAUNDORF, P

CRAVEN, RA

FREDERICK, RA

MOODY, JW

SHAW, RW

机构：

[1] Monsanto Electronic Materials Co,, St. Louis, MO, USA, Monsanto Electronic Materials Co, St. Louis, MO, USA

来源：

关键词：

Compendex;

D O I：

10.1149/1.2114194

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1701 / 1704

页数：4

共 15 条

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