A REFINED THEORETICAL-ANALYSIS OF PHOTOFIELD-EFFECT MEASUREMENTS IN A-SI-H THIN-FILM TRANSISTORS

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] Djamdji F., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P569

[3] EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 407 - 434

[4] THE PHOTOFIELD EFFECT IN A-SI-H THIN-FILM MOS-TRANSISTORS - THEORY AND MEASUREMENT [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01): : 59 - 70

[5] ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 435 - 438

[6] THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICA B & C, 1983, 117 (MAR): : 883 - 885

[7] FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4570 - 4578

[8] AN INVESTIGATION OF SOME FUNDAMENTAL PROPERTIES OF A-SI FROM MEASUREMENTS OF INTERFACE AND SURFACE EFFECTS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 505 - 508

[9] THE DETERMINATION OF CHARACTERISTIC PARAMETERS BY THE TEMPERATURE-DEPENDENT FIELD-EFFECT IN A-SI-H THIN-FILM TRANSISTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 511 - 514

[10] ON THE QUALITY OF CONTACTS IN A-SI-H STAGGERED ELECTRODE THIN-FILM TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1757 - 1760

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712

[2] Djamdji F., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P569

[3] EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 407 - 434

[4] THE PHOTOFIELD EFFECT IN A-SI-H THIN-FILM MOS-TRANSISTORS - THEORY AND MEASUREMENT [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01): : 59 - 70

[5] ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 435 - 438

[6] THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICA B & C, 1983, 117 (MAR): : 883 - 885

[7] FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4570 - 4578

[8] AN INVESTIGATION OF SOME FUNDAMENTAL PROPERTIES OF A-SI FROM MEASUREMENTS OF INTERFACE AND SURFACE EFFECTS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 505 - 508

[9] THE DETERMINATION OF CHARACTERISTIC PARAMETERS BY THE TEMPERATURE-DEPENDENT FIELD-EFFECT IN A-SI-H THIN-FILM TRANSISTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 511 - 514

[10] ON THE QUALITY OF CONTACTS IN A-SI-H STAGGERED ELECTRODE THIN-FILM TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1757 - 1760