THERMAL-CONVERSION OF N-TYPE GAAS-SI TO P-TYPE IN EXCESS ARSENIC VAPOR

被引：17

作者：

KY, NH ^{[1
]}

PAVESI, L ^{[1
]}

ARAUJO, D ^{[1
]}

GANIERE, JD ^{[1
]}

REINHART, FK ^{[1
]}

机构：

[1] UNIV TRENTO,DEPT PHYS,I-38050 TRENT,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealing in excess arsenic vapor at 650-degrees-C introduces thermal conversion of n-type Si-doped GaAs samples (n = 1.3 X 10(18) cm-3) into p type. The observations are made by current-voltage and electron-beam induced current measurements. The donor concentration on the n side near the junction decreases after annealing. We present a comparison between the photoluminescence spectra of samples annealed under different conditions and an analysis of depth profile of the photoluminescence spectra. Our results underline the important role of gallium vacancies and gallium vacancy-silicon donor complex in the thermal conversion.

引用

收藏

页码：3887 / 3891

页数：5

相关论文

共 29 条

[1] CHANGES IN THE ELECTRONIC-PROPERTIES OF BULK GAAS BY THERMAL ANNEALING [J].

ASOM, MT ;

PARSEY, JM ;

KIMERLING, LC ;

SAUER, R ;

THIEL, FA .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1472-1474

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[3] CHARACTERIZATION OF RESIDUAL CARBON IN SEMI-INSULATING GAAS [J].

BONCEK, RK ;

RODE, DL .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6315-6321

[4]

BRIDGES F, 1990, J PHYS C SOLID STATE, V2, P2975

[5] ELECTROABSORPTION BY SUBSTITUTIONAL COPPER IMPURITIES IN GAAS [J].

BURGIEL, JC ;

BRAUN, HJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2583-&

[6] PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF LUMINESCENCE, 1975, 10 (05) :313-322

[7] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[8] ROLE OF ELECTRON TRAPS ON THE THERMAL-CONVERSION AND ITS SUPPRESSION FOR LIQUID-ENCAPSULATED CZOCHRALSKI GAAS SINGLE-CRYSTALS [J].

CHICHIBU, S ;

OHKUBO, N ;

MATSUMOTO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1989, 28 (10) :1750-1755

[9] HEAT TREATMENT OF GALLIUM ARSENIDE [J].

EDMOND, JT .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1428-1430

[10] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J].

GREINER, ME ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5181-5191