DEVELOPMENT OF PHOSPHORUS LIQUID-METAL-ION SOURCE

被引:17
作者
ISHITANI, T
UMEMURA, K
TAMURA, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 05期
关键词
D O I
10.1143/JJAP.23.L330
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:L330 / L332
页数:3
相关论文
共 14 条
[1]   ION-BEAM ASSISTED MASKLESS ETCHING OF GAAS BY 50 KEV FOCUSED ION-BEAM [J].
GAMO, K ;
OCHIAI, Y ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (12) :L792-L794
[2]   LIQUID-METAL ALLOY ION SOURCES FOR B, SB, AND SI [J].
GAMO, K ;
UKEGAWA, T ;
INOMOTO, Y ;
OCHIAI, Y ;
NAMBA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1182-1185
[3]   B, AS AND SI FIELD-ION SOURCES [J].
GAMO, K ;
UKEGAWA, T ;
INOMOTO, Y ;
KA, KK ;
NAMBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L595-L598
[4]   MASS-SEPARATED MICROBEAM SYSTEM WITH A LIQUID-METAL-ION SOURCE [J].
ISHITANI, T ;
UMEMURA, K ;
TAMURA, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :363-367
[5]   CARBON NEEDLE EMITTER FOR BORON AND ALUMINUM ION LIQUID-METAL-ION SOURCES [J].
ISHITANI, T ;
SHIMASE, A ;
TAMURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05) :L277-L278
[6]   ION-BEAM EXPOSURE APPARATUS USING A LIQUID-METAL SOURCE [J].
KOMURO, M .
THIN SOLID FILMS, 1982, 92 (1-2) :155-164
[7]   FET FABRICATION USING MASKLESS ION-IMPLANTATION [J].
KUBENA, RL ;
ANDERSON, CL ;
SELIGER, RL ;
JULLENS, RA ;
STEVENS, EH ;
LAGNADO, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :916-920
[8]   DRY DEVELOPMENT OF RESISTS EXPOSED TO FOCUSED GALLIUM ION-BEAM [J].
KUWANO, H ;
YOSHIDA, K ;
YAMAZAKI, SI .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L615-L617
[9]   LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM [J].
MIYAUCHI, E ;
ARIMOTO, H ;
BAMBA, Y ;
TAKAMORI, A ;
HASHIMOTO, H ;
UTSUMI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L423-L425
[10]  
SMITHELLS CJ, 1976, METAL REFERENCE BOOK, P587