ELECTRON-BEAM INDUCED DAMAGE IN POLY-SI GATE MOS STRUCTURES AND ITS EFFECT ON LONG-TERM STABILITY

被引：19

作者：

SHIMAYA, M

SHIONO, N

NAKAJIMA, O

HASHIMOTO, C

SAKAKIBARA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 04期

关键词：

D O I：

10.1149/1.2119863

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：945 / 950

页数：6

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