AU ACCEPTOR LEVELS IN SI UNDER PRESSURE

被引：9

作者：

LI, MF

CHEN, JX

YAO, YS

BAI, GN

机构：

[1] BEIJING POLYTECH UNIV,DEPT ELECTR,BEIJING,PEOPLES R CHINA

[2] CHINESE ACAD SCI,INST PHYS,BEIJING,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.335889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2599 / 2602

页数：4

共 28 条

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[13]

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[17]

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[18] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON [J].

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BASINSKI, J .

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[19]

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[20] DETERMINATION OF DEFORMATION-POTENTIAL CONSTANT OF CONDUCTION-BAND OF SILICON FROM PIEZOSPECTROSCOPY OF DONORS [J].

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PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (06) :2348-+

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