LPE GROWTH EFFECTS OF INP, IN0.53GA0.47AS, AND IN0.75GA0.25AS0.55P0.45 ON STRUCTURED INP SUBSTRATES

被引:14
作者
CHAND, N
SYRBU, AV
HOUSTON, PA
机构
关键词
D O I
10.1016/0022-0248(83)90278-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:53 / 60
页数:8
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共 15 条
[1]   LIQUID-PHASE EPITAXY OF ALGAAS HETEROSTRUCTURES ON PROFILED SUBSTRATES [J].
ANDREYEV, VM ;
EGOROV, VV ;
SYRBU, AV ;
TROFIM, VG ;
YAKOVLEV, VP .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (04) :379-385
[2]  
ASTLES MG, 1974, J CRYST GROWTH, V27, P142
[3]   INVESTIGATION OF GROWTH KINETICS AND MECHANISM OF GAAS AND (INGA)AS THIN-FILMS GROWN BY A STEP-COOLING TECHNIQUE OF LIQUID-PHASE EPITAXY [J].
BOLKHOVITYANOV, YB ;
ZEMBATOV, HB .
JOURNAL OF CRYSTAL GROWTH, 1977, 37 (02) :101-106
[4]   GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS [J].
BOTEZ, D ;
TSANG, WT ;
WANG, S .
APPLIED PHYSICS LETTERS, 1976, 28 (04) :234-237
[5]  
DOI A, 1979, APPL PHYS LETT, V34, P393, DOI 10.1063/1.90808
[6]   SURFACE-ANALYSIS DURING VAPOR-PHASE GROWTH [J].
HOTTIER, F ;
THEETEN, JB .
JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :644-654
[7]   CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].
KIRKBY, PA ;
THOMPSON, GHB .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4578-4589
[8]   FABRICATION AND LASING PROPERTIES OF MESA SUBSTRATE BURIED HETEROSTRUCTURE GAINASP-INP LASERS AT 1.3 MU-M WAVELENGTH [J].
KISHINO, K ;
SUEMATSU, Y ;
TAKAHASHI, Y ;
TANBUNEK, T ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :160-164
[9]   INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT [J].
MUROTANI, T ;
OOMURA, E ;
HIGUCHI, H ;
NAMIZAKI, H ;
SUSAKI, W .
ELECTRONICS LETTERS, 1980, 16 (14) :566-568
[10]   DIRECT LPE GROWTH OF INP ON (111)A ORIENTED IN0.53GA0.47AS WITHOUT DISSOLUTION [J].
NAKAJIMA, K ;
YAMAZAKI, S ;
AKITA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L237-L239