DEFECT POOL MODEL OF DEFECT FORMATION IN A-SI-H

被引：12

作者：

WINER, K

机构：

[1] Lawrence Livermore National Laboratory, Livermore, CA 94550

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80080-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The bulk chemical processes responsible for defect formation in hydrogenated amorphous silicon (a-Si:H) are examined. Thermodynamic analyses of the corresponding chemical reactions account quantitatively for the observed defect density dependence on temperature and Fermi energy, and for the behavior of the defect density in a-Si:H under voltage bias, illumination with band-gap light, and during hydrogen depletion.

引用

收藏

页码：157 / 162

页数：6

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