PHOTO-IONIZATION CROSS-SECTION OF ELECTRON TRAPS IN SILICON-NITRIDE FILMS

[1] STEADY-STATE ELECTRON AND HOLE SPACE-CHARGE DISTRIBUTION IN LPCVD SILICON-NITRIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 802 - 804

[2] CHARGE STORAGE BY IRRADIATION WITH UV LIGHT IN NON-BIASED MNOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1977, 20 (04) : 361 - 365

[3] ENERGY-DISTRIBUTION OF ELECTRON-TRAPPING CENTERS IN LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SI3N4 FILMS [J]. THIN SOLID FILMS, 1981, 78 (02) : 193 - 201

[4] KAPOOR VJ, 1977, J APPL PHYS, V48, P739, DOI 10.1063/1.323664

[5] CHARGE STORAGE AND DISTRIBUTION IN THE NITRIDE LAYER OF THE METAL-NITRIDE-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 311 - 319

[6] KAPOOR VJ, 1980, PHYSICS MOS INSULATO, P117

[7] VALENCE ALTERNATION PAIR MODEL OF CHARGE STORAGE IN MNOS MEMORY DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4190 - 4195

[8] CHARGE CENTROID AND TRAPPING MODEL FOR MNOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2763 - 2764

[9] CHARACTERIZATION OF CURRENT TRANSPORT IN MNOS STRUCTURES WITH COMPLEMENTARY TUNNELING EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 899 - 906

[10] SUGUKI E, 1979, J APPL PHYS, V50, P7001

[1] STEADY-STATE ELECTRON AND HOLE SPACE-CHARGE DISTRIBUTION IN LPCVD SILICON-NITRIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 802 - 804

[2] CHARGE STORAGE BY IRRADIATION WITH UV LIGHT IN NON-BIASED MNOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1977, 20 (04) : 361 - 365

[3] ENERGY-DISTRIBUTION OF ELECTRON-TRAPPING CENTERS IN LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SI3N4 FILMS [J]. THIN SOLID FILMS, 1981, 78 (02) : 193 - 201

[4] KAPOOR VJ, 1977, J APPL PHYS, V48, P739, DOI 10.1063/1.323664

[5] CHARGE STORAGE AND DISTRIBUTION IN THE NITRIDE LAYER OF THE METAL-NITRIDE-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 311 - 319

[6] KAPOOR VJ, 1980, PHYSICS MOS INSULATO, P117

[7] VALENCE ALTERNATION PAIR MODEL OF CHARGE STORAGE IN MNOS MEMORY DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4190 - 4195

[8] CHARGE CENTROID AND TRAPPING MODEL FOR MNOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2763 - 2764

[9] CHARACTERIZATION OF CURRENT TRANSPORT IN MNOS STRUCTURES WITH COMPLEMENTARY TUNNELING EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 899 - 906

[10] SUGUKI E, 1979, J APPL PHYS, V50, P7001