STEADY-STATE ELECTRON AND HOLE SPACE-CHARGE DISTRIBUTION IN LPCVD SILICON-NITRIDE FILMS

被引:29
作者
HAMPTON, FL
CRICCHI, JR
机构
[1] Westinghouse Electric Corporation, Baltimore
关键词
D O I
10.1063/1.90942
中图分类号
O59 [应用物理学];
学科分类号
摘要
Trapped electron and hole space charge distributions in silicon nitride are derived from steady-state measurements of the change in flatband voltage versus the maximum field in the nitride. These measurements coupled with the Arnett-Yun model provide a good relative measure of the hole and electron trap densities, trapping lengths, and cross sections. Significant differences between hole and electron values at 25 and 175°C were observed.
引用
收藏
页码:802 / 804
页数:3
相关论文
共 13 条