CALIBRATION OF THE INFRARED-ABSORPTION DUE TO SILICON IN GALLIUM-ARSENIDE

被引：28

作者：

WOODHEAD, J

NEWMAN, RC

TIPPING, AK

CLEGG, JB

ROBERTS, JA

GALE, I

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND

[2] PHILIPS RES LABS,REDHILL RH1 5HA,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1985年 / 18卷 / 08期

关键词：

D O I：

10.1088/0022-3727/18/8/021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1575 / 1583

页数：9

共 17 条

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[7]

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[9] AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

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[10] LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

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