TRANSIENT ELECTRONIC RESPONSE IN HYDROGENATED AMORPHOUS-SILICON

被引：9

作者：

SILVER, M ^{[1
]}

SNOW, E ^{[1
]}

ADLER, D ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3503 / 3507

页数：5

共 21 条

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[6] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

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[8]

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