THICKNESS MEASUREMENT OF THIN OXIDE LAYERS IN MOS CAPACITORS

被引：3

作者：

DUZELIER, S

SARRABAYROUSE, G

PROM, JL

HOLLINGER, G

机构：

[1] CNRS,AUTOMAT & ANAL SYST,F-31077 TOULOUSE,FRANCE

[2] ECOLE CENT LYON,ELECTR LAB,F-69131 ECULLY,FRANCE

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 16期

关键词：

CAPACITORS; METAL-OXIDE-SEMICONDUCTOR STRUCTURES AND DEVICES;

D O I：

10.1049/el:19910878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The validity of the SiO2 layer thickness determined from capacitance-voltage measurements in MOS devices is demonstrated by comparison with results obtained by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and spectroscopic ellipsometry published elsewhere in the literature.

引用

收藏

页码：1399 / 1400

页数：2

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