ELECTRICAL-CONDUCTION IN MOS CAPACITORS WITH AN ULTRA-THIN OXIDE LAYER

被引：29

作者：

KASSMI, K

PROM, JL

SARRABAYROUSE, G

机构：

[1] Laboratoire d'Automatique et d'Analyse des Systèmes, 31077 Toulouse Cédex

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 05期

关键词：

D O I：

10.1016/0038-1101(91)90154-Q

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conduction properties of Cr-SiO2-Si capacitors are investigated. Process dependent excess currents of a Fowler-Nordheim type correlated with the breakdown strength are shown to exist at low field. These currents have characteristics different from those of known high field induced excess currents.

引用

页码：509 / 514

页数：6

共 22 条

[1] ELECTRON-TUNNELING AT AL-SIO2 INTERFACES
AVRON, M
SHATZKES, M
DISTEFANO, TH
GDULA, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2897 - 2908
[2] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES
BHATTACHARYYA, A
VORST, C
CARIM, AH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1900 - 1903
[3] FARMER KR, 1988, APPL PHYS LETT, V52, P1479
[4] HARRARI E, 1977, APPL PHYS LETT, V30, P601
[5] CATASTROPHIC BREAKDOWN IN SILICON-OXIDES - THE EFFECT OF FE IMPURITIES AT THE SIO2-SI INTERFACE
HONDA, K
NAKANISHI, T
OHSAWA, A
TOYOKURA, N
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1960 - 1963
[6] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +
[7] LEAKAGE AND BREAKDOWN IN THIN OXIDE CAPACITORS - CORRELATION WITH DECORATED STACKING-FAULTS
LIN, PSD
MARCUS, RB
SHENG, TT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) : 1878 - 1883
[8] BEHAVIOR OF THE SI/SIO2 INTERFACE OBSERVED BY FOWLER-NORDHEIM TUNNELING
MASERJIAN, J
ZAMANI, N
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 559 - 567
[9] LOW-FREQUENCY NOISE IN SILICON GATE METAL-OXIDE-SILICON CAPACITORS BEFORE OXIDE BREAKDOWN
NERI, B
OLIVO, P
RICCO, B
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (25) : 2167 - 2169
[10] MEASUREMENT OF FOWLER-NORDHEIM TUNNELING CURRENTS IN MOS STRUCTURES UNDER CHARGE TRAPPING CONDITIONS
NISSANCOHEN, Y
SHAPPIR, J
FROHMANBENTCHKOWSKY, D
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (07) : 717 - 720

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