STRAIN-DEPENDENT DEFECT FORMATION KINETICS AND A CORRELATION BETWEEN FLAT-BAND VOLTAGE AND NITROGEN DISTRIBUTION IN THERMALLY NITRIDED SIOXNY/SI STRUCTURES

被引：102

作者：

VASQUEZ, RP

MADHUKAR, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：998 / 1000

页数：3

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