ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

JEONG, YH ^{[1
]}

JEONG, DH ^{[1
]}

HONG, WP ^{[1
]}

CANEAU, C ^{[1
]}

BHAT, R ^{[1
]}

HAYES, JR ^{[1
]}

机构：

[1] BELL COMMUN RES INST,RED BANK,NJ 07701

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2A期

关键词：

ALINAS/INP; DELTA-DOPED; FET; OMCVD;

D O I：

10.1143/JJAP.31.L66

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on organometallic chemical vapor deposition (OMCVD)-grown AlInAs/InP field effect transistors (EET's), employing a delta-doped channel. The EET's, having a gate length of 1.0-mu-m, demonstrated excellent saturation characteristics and a broad plateau of transconductance around a peak value of 210 mS/mm. The transistors were also highly stable with no hysteresis or long-term drain current drift being observed.

引用

页码：L66 / L67

页数：2

共 9 条

[1] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH AND CHARACTERIZATION OF DELTA-DOPED INP
DIFORTEPOISSON, MA
BRYLINSKI, C
BLONDEAU, E
LAVIELLE, D
PORTAL, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 867 - 869
[2] HETEROJUNCTION INALAS/INP MESFETS GROWN BY OMVPE
FATHIMULLA, MA
LOUGHRAN, T
STECKER, L
HEMPFLING, E
MATTINGLY, M
AINA, O
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 223 - 225
[3] INXAL1-XAS/INP HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS (HIGFETS)
HANSON, CM
CHU, P
WIEDER, HH
CLAWSON, AR
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 53 - 54
[4] CHARACTERISTICS OF ALGAAS GAAS QUANTUM-WELL DELTA-DOPED CHANNEL FET (QUADFET)
HONG, WP
ZRENNER, A
KIM, OH
HARBISON, J
FLOREZ, L
DEROSA, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (08) : 1924 - 1926
[5] ISHIBASHI A, 1988, ELECTRON LETT, V24, P1033
[6] JANG KS, 1991, AUG INT C EL INF COM
[7] THRESHOLD VOLTAGE DRIFT OF INP NORMAL-CHANNEL ENHANCEMENT MODE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
JOHNSON, JG
FORREST, SR
ZEISSE, CR
NGUYEN, R
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 495 - 497
[8] SUBMICRON-GATE IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS HETEROJUNCTION METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
KUANG, JB
TASKER, PJ
CHEN, YK
WANG, GW
EASTMAN, LF
AINA, OA
HIER, H
FATHIMULLA, A
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1136 - 1138
[9] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET)
SCHUBERT, EF
FISCHER, A
PLOOG, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 625 - 632

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